lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 1 of 6 1n941ur -1 thru 1n945bur -1 available on commercial versions 1 1.7 volt temperature compensated zener reference diodes qualified per mil -prf- 19500/157 * qualified levels : jan, jantx , jantxv and jans (availa ble on some part numbers) description the popular 1n941ur -1 thru 1n945bur - 1 series of zero - tc reference diodes provides a selection of 1 1.7 v nominal voltages and temperature coefficients to as low as 0.0002 %/ o c for minimal voltage change with temperature when operated at 7.5 ma. some of these glass , do - 213aa reference diodes are also available in jan, jantx, jantxv and jans military qualifications. microsemi also offers numerous other zener reference diode product s for a variety of other voltages from 6.2 v to 200 v. do - 213aa package also available in : do - 35 (do - 204ah) ( axial - leaded ) 1n941 - 1 thru 1n945b -1 important: for the latest information, visit our website http://www.microsemi.com . features ? surface mount equivalent of the jedec registered 1n 941 thru 1n 945 series . ? standard reference voltage of 1 1.7 v +/ - 5% with tighter tolerances also available for commercial . ? intern al metallurgical bond . ? * jan, jantx, jantxv and jans qualification per mil - prf - 19500/157 available on 1n941 b ur -1 , 1n943 b ur -1 , 1n944 b ur -1 , and 1n945 b ur -1. ? rohs compliant versions available (commercial grade only) . applications / benefits ? provides minimal voltage changes over a broad temperature range. ? for instrumentation and other circuit designs requiring a stable voltage reference. ? maximum temperature coefficient selections available from 0.01 %/oc to 0.000 5 %/oc. ? non - sensitive to esd per mil - s td - 750 , m ethod 1020. m axim um ratings msc C law rence 6 lake street, lawrence, ma 01841 1- 800 - 446 - 1158 tel: (978) 620 - 2600 fax: (978) 689 - 0803 msc C ir eland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/tes t conditions symbol value unit power dissipation @ t l = 25 o c and maximum current i zm of 39 ma. (1, 2) p d 500 mw junction and storage temp t j and t stg - 55 to +175 o c maximum zener current i zm 39 ma solder temperature @ 10 s t sp 260 o c notes : 1 . for optimum voltage - temperature stability, i z = 7.5 ma (less than 95 mw in dissipated power). 2. derate at 3.33 mw/ o c above t a = +25 o c. downloaded from: http:///
lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 2 of 6 1n941ur -1 thru 1n945bur -1 mechanical and packaging ? case: hermetically sealed glass case with surface mount do - 213aa (melf, sod - 80, ll 34) package. ? terminals: tin - lead plated or rohs compliant matte -t in plating available (on commercial grade only) and solderable per mil - std - 750, m ethod 2026. ? marking: cathode band. ? polarity: reference diode to be operated with the banded end positive with respect to the opposite end. ? mounting surface selection: the axial coefficient of expansion (coe) of this device is approximately +6ppm/ o c. the coe of the mounting surface system should be selected to provide a suitable match with thi s device. ? tape & reel option: standard per eia - 481 - b with 12 mm tape. consult factory for quantities. (a dd tr suffix to part number .) ? weight: 0.2 grams. ? see p ackage d imensions on the last page. part nomenclature applicabl e to: jan , jantx, jantxv and jans level 1n941, 1n943, 1n944, and 1n945 only : jan 1n941 b ur -1 reliability level jan = jan level jantx = jantx level jantxv = jantxv level jans = jans level jedec type number ( see electrical characteristics t able ) metallurgical ly bond ed surface mount package temperature coefficient range of - 55 o c to +150 o c applicable to: c ommercial level 1n941 thru 1n945 b : 1n941 a ur -1 - 1% (e3) je dec type number ( see electrical characteristics t able ) temperature coefficient range: a = - 55 o c to +100 o c b = -55 o c to +150 o c blank = 0 o c to +75 o c surface mount package rohs compliance e3 = rohs c ompliant (available on commercial grade only) blank = non - rohs c ompliant tighter reference tolerance 1% 2% 3% blank = 5% metallurgical ly bond ed downloaded from: http:///
lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 3 of 6 1n941ur -1 thru 1n945bur -1 symbols & definitions symbol definition i r reverse current: the maximum reverse (leakage) current that will flow at the specified volt age and temperature. i z , i zt , i zk regulator current: the dc regulator current (i z ), at a specified test point (i zt ), near breakdown knee (i zk ). v z zener voltage: the z ener voltage the device will exhibit at a specifie d current (i z ) in its breakdown region. v zt zener voltage temperature. z zt or z zk dynamic impedance: the small signal impedance of the diode when biased to operate in its breakdown region at a specified rms current modulation (typically 10% of i zt or i zk ) and superimposed on i zt or i zk respectively. electrical characteristics @ 25 o c unless otherwise specified. jedec type number (note s 4) zener voltage v z @ i zt (note 3) zener test current i zt maximum zener impedance z zt @ i zt (note 1) maximum reverse current i r @ 8 v voltage temperature st ab ilit y ? v zt maximum (note 2 & 3) temperature range effective temperature coefficient vz volts ma ohms a mv o c % / o c 1n941ur -1 1n941aur -1 1n941bur -1 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 7.5 7.5 7.5 30 30 30 15 15 15 88 181 239 0 to +75 - 55 to +100 - 55 to +150 0.01 0.01 0.01 1n942ur -1 1n942aur -1 1n942bur -1 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 7. 5 7.5 7.5 30 30 30 15 15 15 44 90 120 0 to +75 - 55 to +100 - 55 to +150 0.005 0.005 0.005 1n943ur -1 1n943aur -1 1n943bur -1 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 7.5 7.5 7.5 30 30 30 15 15 15 18 36 47 0 to +75 - 55 to +100 - 55 to +150 0.002 0.002 0.002 1n944ur -1 1n944aur -1 1n944bur -1 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 7.5 7.5 7.5 30 30 30 15 15 15 9 18 24 0 to +75 - 55 to +100 - 55 to +150 0.001 0.001 0.001 1n945ur -1 1n945aur -1 1n945bur -1 11.12 - 12.28 11.12 - 12.28 11.12 - 12.28 7.5 7.5 7.5 30 30 30 15 15 15 4 9 12 0 to +75 - 55 to +100 - 55 to +150 0.0005 0.0005 0.0005 *jedec registered data. notes: 1. measured by superimposing 0.75 ma ac rms on 7.5 ma dc @ 25 o c. 2. the maximum allowable change observed over the entire temperature range i.e., th e diode voltage will not exceed the specified mv change at any discrete temperature between the established limits. 3. voltage measurements to be performed 15 seconds after application of dc current. 4. the 1n941bur -1 , 1n943bur -1 , 1n944bur -1 , and 1n945bur -1 only are mil itary qualifi ed to mil - prf - 19500/157 up to the jan s level . downloaded from: http:///
lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 4 of 6 1n941ur -1 thru 1n945bur -1 graphs i z C operating current (ma) figure 1 typical change of temperature coefficient with change in operating current i z C operating cu rrent (ma) figure 2 typical change of zener voltage w ith change in operating current change in temperature coefficient (%/ o c) change in temperature coefficient (mv/ o c) the curve shown in figure 1 is typical of the diode series and greatly simplifies the estimation of the temperature coe fficient (tc) when the diode is operated at currents other than 7.5 ma. example: a diode in this series is operated at a current of 7.5 ma and has specified temperature coefficient (tc) limits of +/ - 0.002 %/ o c . to obtain the typical temperature coefficie nt limits for this same diode operated at a current of 6.0 ma, the new tc limits (%/ o c ) can be estimated using the graph in f i gure 1. at a test current of 6.0ma the change in temperature coefficient (tc) is approximately C 0.0009 %/ o c . the algebraic sum of +/ - 0.002 %/ o c and C 0.0009 %/ o c gives the new estimated limits of +0.0011 %/ o c and - 0.0029 %/ o c. ? v z C change in zener voltage (mv) this curve in figure 2 illustrates the change of diode voltage arising from the effect of impedance. it is in effect, an exploded view of the z ener operating region of the i - v characteristic. in conjunction with figure 1, this curve can be used to estimate total voltage regulation under conditions of both varying temperature and current. downloaded from: http:///
lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 5 of 6 1n941ur -1 thru 1n945bur -1 graphs 600 500 400 300 200 100 0 0 25 50 75 100 125 150 175 t ec , ambient temperature (c) figure 3 power der ating curve o perating current l zt (ma) figure 4 typical zener impedance vs. operating current p d , rated power dissi pation (mw) zener impedance z zt (ohms) downloaded from: http:///
lds - 0222 - 1, rev . 1 (111515) ?2011 microsemi corporation page 6 of 6 1n941ur -1 thru 1n945bur -1 package dimensions notes: 1. dimensions are in inches. 2. millimeters are given for general information only. 3. in accordance with asme y14.5m, diameters are equivalent to x symbology. pad layout in ch mi lli meter dim min max min max bd 0.0 63 0.0 67 1.60 1.70 ect 0.0 16 0.0 22 0.41 0.56 bl 0 .130 0 .146 3.30 3.70 s 0 .0 01 min 0.03 min dim inch millimeter a .200 5.08 b .055 1.40 c .080 2.03 downloaded from: http:///
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